OS-55000N Series (High-temperature type)

Specifications

n Suitable for Ohmic electrode alloy and anneal for wide-gap semiconductor (GaN, SiC, et.)
n Use of small-size special high-temperature furnace
n Temperature zone for common use
	: 800 - 1300 degree Celsius (MAX1300deg C.)
n Distribution of in- plane temperature
	: 4 inch wafer in-plane±3 deg C.(at 1200 deg C.)
		(On 0.5mm-thick carbon tray)
n Compatible size of substrate
	φ3 - 6 inch (Compatible to φ6 inch is an option)
n Wafer conveyance
	: Single-wafer processing robot conveyance 　(adapted to 25 cassettes)
n Treatment atmosphere
	: Inert gas (H2 atmosphere is an option)
n Standard size of equipment
	：　1,000（Ｗ）×1,750（Ｄ）×1,450（Ｈ）
n Weight of equipment
	: Approx. 950 kg

OS-45000N Series (Mid-temperature type)

Specifications

n Suitable for various alloy and anneal
n Use of small-size special high-temperature furnace
n Temperature zone for common use
	: 500 - 800 degree Celsius (MAX 850 deg C.)
n Distribution of in- plane temperature
	: 4 inch wafer in-plane ±3 deg C. (at 800 deg C.)
n Compatible size of substrate
	: φ2 - 4 inch (Compatible to φ6 inch is an option)
n Wafer conveyance
	: Single-wafer processing robot conveyance 　(adapted to 25 cassettes)
n Treatment atmosphere
	: Inert gas or during decompression (O2 or H2 atmosphere is an option)
n Standard size of equipment
	：　960(W)×1,650(D)×1,450(H)（Ｈ）
n Weight of equipment
	: Approx. 850 kg

OS-35000N Series (Low-temperature type)

Specifications

n Suitable for Ohmic electrode alloy and anneal for the compound semiconductor for general purpose (GaAs system and InP system)
n Use of small-size special high-temperature furnace
n Temperature zone for common use
	: 300 - 500 deg C (MAX 550 deg C.)
n Distribution of in- plane temperature
	: 4 inch wafer in-plane±2 deg C. (at 450 deg C.)
n Compatible size of substrate
	: φ2 - 4 inch (Compatible to φ6 inch is an option)
n Wafer conveyance
	: Single-wafer processing robot conveyance 　(adapted to 25 cassettes)
n Treatment atmosphere
	: Inert gas (O2 or H2 atmosphere is an option)
n Standard size of equipment
	：　900(W)×1,210(D)×1,450(H)
n Weight of equipment
	: Approx. 750 kg

　

	Ohmic Alloy System
	Batch-processing wafer annealing system
	Vertical-type diffusion system

	Contamination extraction system
	Single wafer dual-side cleaning system
	Single wafer lift-off system
	RCA wet- and UV cleaning / complex system

	Laser abrasive CVD system
	Diamond deposition system
	ALD system
	Electron beam vacuum deposition system

	Fully-automated etching system
	Multipurpose etching system
	Dry etching system for compound semiconductors
	Multi-electrode dry etching system

	Electrodeless high-power UV opto-irradiation system
	Desktop-type deep UV surface cleaning system
	UV ashing system
	Hard disk surface cleaning system

	KOH anisotropic etching system
	Anodic bonding system for micro-machine
	Electroplating treatment system

	Atmospheric ion counter
	Counter for particle in the liquid

	Microchip electrophoresis system
	HandyMS(Small-size flight-time-type mass spectrometry system)

	Small-size high-voltage generating system
	Multifunctional etching & ashing system
	Back-side etching system
	Atmospheric-pressure plasma system for MEMS

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